A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology
نویسندگان
چکیده
منابع مشابه
A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology
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ژورنال
عنوان ژورنال: Journal of electromagnetic engineering and science
سال: 2017
ISSN: 2234-8409
DOI: 10.5515/jkiees.2017.17.3.147